III-Nitride Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy
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Join the OSA Laser Systems Technical Group and Dr. Hieu Nguyen of the New Jersey Institute of Technology for an hour long webinar featuring a presentation on III-nitride nanowire light-emitting diodes grown by molecular beam epitaxy.


Group III-nitride nanowire heterostructures have been intensively studied as an emerging platform for future solid-state lighting and full-color display. Compared to the conventional GaN based planar light emitting diodes (LEDs), due to the effective lateral stress relaxation, III-nitride nanowires offer several distinct advantages including greatly reduced dislocation densities, polarization fields, and quantum-confined Stark effect.


Nanowire LEDs have emerged as a highly promising candidate for future phosphor-free solid-state lighting. Moreover, the use of nanowire structure provides an effective approach to scale down the dimensions of future devices and systems. In this talk, Dr. Nguyen will discuss the molecular beam epitaxial growth, fabrication, and characterization of ultrahigh-efficiency phosphor-free III-nitride dot-in-a-wire and core-shell nanowire LEDs on Si and copper platforms. The LED devices can exhibit relatively high out power of ~ 5.1 mW. Future prospects of these nanowire devices will also be discussed during the webinar.


What You Will Learn in the Webinar:

  • Attendees will learn the current status of nanowire LED research as well as approaches to improve LED device performance.
  • Attendees will learn the molecular beam epitaxial growth, device fabrication and characterization of nanowire devices.


Who Should Attend the Webinar:

  • Academia, government and industry researchers


Seminar Information
Seminar Date:
July 27, 2016